Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3983-3986

  Jo, Byounggu ^a   Yang, Youngsin ^a   Kim, Jaesu ^a   Ko, Myoungkuk ^a   Lee, Kwang Jae ^a   Lee, Cheul Ro ^a   Kim, Jin Soo ^a   Choi, Byoung Seok ^b   Oh, Dae Kon ^b   Leem, Jae Young ^c   Kim, Jong Su ^d  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Inje University   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Carrier confinement; Laser diode; Quantum dot

Indexed keywords

ACTIVE LAYERS; AVERAGE HEIGHTS; CARRIER CONFINEMENT; CARRIER WAVES; CAVITY LENGTHS; INAS; INAS/INALGAAS; LASER DIODE; LASING CHARACTERISTICS; LASING EMISSIONS; LASING WAVELENGTHS; OVERLAP INTEGRALS; QUANTUM DOT; QUANTUM DOT LASERS; RED-SHIFTED; SLOPE EFFICIENCIES; THRESHOLD CURRENTS; WAVELENGTH STABILITIES;

CHEMICAL BONDS; DIODES; INDIUM ARSENIDE; LADDER NETWORKS; LASERS; MOLECULAR ORBITALS; SEMICONDUCTING INDIUM; SLOPE STABILITY; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65449123417     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.110     Document Type: Article

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