Properties and reactivity of chlorine trifluoride

Semiconductor International

Volumn 22, Issue 6, 1999, Pages

  Gugliemini, Carmen J ^a,b,c   Johnson, Andrew D ^a,d,e  

^a AIR PRODUCTS AND CHEMICALS INC   (United States)

^b Specialty Gases Department

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d Electronics Division at Air Products

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE TRIFLUORIDE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR PROCESS TOOLS;

ENVIRONMENTAL IMPACT; FLUORINE COMPOUNDS; IN SITU PROCESSING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REGULATORY COMPLIANCE; SURFACE CLEANING; SYSTEMS ANALYSIS; TEMPERATURE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 6544291741     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. B. A Huling, G. M. Engle, C.A. Schneider, R. J. Gibson, and R. G Ridgeway. "A simple in situ cleaning method for LPCVD polysilicon and silicon nitride tubes." Solid State Technology, p. 73, Oct. 1994.
2. W. I Bailey and A. J. Woytek, "Fluorine Compounds, Inorganic (Halogens)," in "Kirk-Othmer Encyclopedia of Chemical Technology," Vol. 11, 1994, pp. 342-355.
3. Air Products and Chemicals, Inc., "Chlorine Trifluoride Technical Data, Safety and Handling," Pub. No. 320-9711