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Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

(10) Yang, X L a Zhu, W X a Wang, C D a Fang, H a Yu, T J a Yang, Z J a Zhang, G Y a Qin, X B b Yu, R S b Wang, B Y b

a PEKING UNIVERSITY (China)

b INSTITUTE OF HIGH ENERGY PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPPLER BROADENING SPECTRUM; GAN FILMS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MN CONCENTRATIONS; POSITRON ANNIHILATION TECHNIQUES; POSITRON TRAPPING; VACANCY-TYPE DEFECTS;

DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC PROPERTIES; MANGANESE; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING GALLIUM; TUNGSTEN COMPOUNDS; VACANCIES;

MANGANESE COMPOUNDS;

EID: 65249186436 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3120267 Document Type: Article

Times cited : (24)

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