SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 15, 2009, Pages

Buffer layer-induced unusual rectifying behavior in La0.67 Ca0.33 MnO>/LaMnO>/SrTiO >:Nb junctions

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX BAND STRUCTURES; INTERFACIAL BARRIERS; INTERMEDIATE LAYERS; NB JUNCTIONS; PROCESS BEHAVIORS; RECTIFYING BEHAVIORS;

BAND STRUCTURE; CALCIUM; DISTILLATION; MANGANESE COMPOUNDS; NIOBIUM; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65249176765 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3122343 Document Type: Article

Times cited : (10)

References (12)

1
- 0003629003
- edited by Y. Tokura (Gordon and Breach, New York).
- Colossal Magnetoresistive Oxides, edited by, Y. Tokura, (Gordon and Breach, New York, 1999).
- (1999) Colossal Magnetoresistive Oxides

2
- 0004005306
- 2nd ed. (Wiley, New York).
- M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, M.¹

3
- 0000922886
- 0021-4922 10.1143/JJAP.38.2675, ();, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2001).
- M. Sugiura, K. Uragou, M. Noda, M. Tachiki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.38.2675 38, 2675 (1999); H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2001).
- (1999) Jpn. J. Appl. Phys., Part 1 , vol.38 , pp. 2675
- Sugiura, M.¹ Uragou, K.² Noda, M.³ Tachiki, M.⁴ Kobayashi, T.⁵ Tanaka, H.⁶ Zhang, J.⁷ Kawai, T.⁸

4
- 1642619659
- 0003-6951 10.1063/1.1664032, ();, Appl. Phys. Lett. 86, 082504 (2005).
- J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. 0003-6951 10.1063/1.1664032 84, 1528 (2004); N. Nakagawa, M. Asai, Y. Mukunoki, T. Susaki, and H. Y. Hwang, Appl. Phys. Lett. 86, 082504 (2005).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1528
- Sun, J.R.¹ Xiong, C.M.² Zhao, T.Y.³ Zhang, S.Y.⁴ Chen, Y.F.⁵ Shen, B.G.⁶ Nakagawa, N.⁷ Asai, M.⁸ Mukunoki, Y.⁹ Susaki, T.¹⁰ Hwang, H.Y.¹¹

5
- 9744237256
- 0003-6951 10.1063/1.1806560, ();, Appl. Phys. Lett. 0003-6951 10.1063/1.2140878 87, 242501 (2005).
- J. R. Sun, B. G. Shen, Z. G. Sheng, and Y. P. Sun, Appl. Phys. Lett. 0003-6951 10.1063/1.1806560 85, 3375 (2004); Z. G. Sheng, B. C. Zhao, W. H. Song, Y. P. Sun, J. R. Sun, and B. G. Shen, Appl. Phys. Lett. 0003-6951 10.1063/1.2140878 87, 242501 (2005).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3375
- Sun, J.R.¹ Shen, B.G.² Sheng, Z.G.³ Sun, Y.P.⁴ Sheng, Z.G.⁵ Zhao, B.C.⁶ Song, W.H.⁷ Sun, Y.P.⁸ Sun, J.R.⁹ Shen, B.G.¹⁰

6
- 3142563213
- 0021-8979 10.1063/1.1737802, ();, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591472 18, 1785 (2000);, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.2041 77, 2041 (1996);, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51.13942 51, 13942 (1995).
- D. W. Reagor, S. Y. Lee, Y. Li, and Q. X. Jia, J. Appl. Phys. 0021-8979 10.1063/1.1737802 95, 7971 (2004); John Robertson, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591472 18, 1785 (2000); H. Y. Hwang, S. W. Cheong, N. P. Ong, and B. Batlogg, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.2041 77, 2041 (1996); T. Saitoh, A. E. Boucquet, T. Mizokawa, H. Namatame, A. Fujimori, M. Abbate, Y. Takeda, and M. Takano, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51. 13942 51, 13942 (1995).
- (2004) J. Appl. Phys. , vol.95 , pp. 7971
- Reagor, D.W.¹ Lee, S.Y.² Li, Y.³ Jia, Q.X.⁴ Robertson, J.⁵ Hwang, H.Y.⁶ Cheong, S.W.⁷ Ong, N.P.⁸ Batlogg, B.⁹ Saitoh, T.¹⁰ Boucquet, A.E.¹¹ Mizokawa, T.¹² Namatame, H.¹³ Fujimori, A.¹⁴ Abbate, M.¹⁵ Takeda, Y.¹⁶ Takano, M.¹⁷

7
- 0032155719
- 0021-8979,. 10.1143/JJAP.37.4737
- T. Yamamoto, S. Suzuki, K. Kawaguchi, and K. Takahashi, J. Appl. Phys. 0021-8979 37, 4737 (1998). 10.1143/JJAP.37.4737
- (1998) J. Appl. Phys. , vol.37 , pp. 4737
- Yamamoto, T.¹ Suzuki, S.² Kawaguchi, K.³ Takahashi, K.⁴

8
- 0003724573
- (Pergamon, New York)
- B. L. Sharma and R. K. Purohit, Semiconductor Heterojunctions (Pergamon, New York, 1974), pp. 4-6.
- (1974) Semiconductor Heterojunctions , pp. 4-6
- Sharma, B.L.¹ Purohit, R.K.²

9
- 0000035860
- 0163-1829,. 10.1103/PhysRevB.33.1146
- N. Newman, M. van Schilfgaarde, T. Kendelwicz, M. D. Williams, and W. E. Spicer, Phys. Rev. B 0163-1829 33, 1146 (1986). 10.1103/PhysRevB.33.1146
- (1986) Phys. Rev. B , vol.33 , pp. 1146
- Newman, N.¹ Van Schilfgaarde, M.² Kendelwicz, T.³ Williams, M.D.⁴ Spicer, W.E.⁵

10
- 57049113225
- 0003-6951,. 10.1063/1.3021399
- W. M. Lü, J. R. Sun, D. J. Wang, Y. W. Xie, S. Liang, Y. Z. Chen, and B. G. Shen, Appl. Phys. Lett. 0003-6951 93, 212502 (2008). 10.1063/1.3021399
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212502
- Lü, W.M.¹ Sun, J.R.² Wang, D.J.³ Xie, Y.W.⁴ Liang, S.⁵ Chen, Y.Z.⁶ Shen, B.G.⁷

11
- 3442892358
- 0036-8075,. 10.1126/science.1098867
- H. Yamada, Y. Ogawa, Y. Ishii, H. Sato, M. Kawasaki, H. Akoh, and Y. Tokura, Science 0036-8075 305, 646 (2004). 10.1126/science.1098867
- (2004) Science , vol.305 , pp. 646
- Yamada, H.¹ Ogawa, Y.² Ishii, Y.³ Sato, H.⁴ Kawasaki, M.⁵ Akoh, H.⁶ Tokura, Y.⁷

12
- 0001128135
- 0163-1829,. 10.1103/PhysRevB.66.134416
- M. Bibes, S. Valencia, L. Balcells, B. Martínez, J. Fontcuberta, M. Wojcik, S. Nadolski, and E. Jedryka, Phys. Rev. B 0163-1829 66, 134416 (2002). 10.1103/PhysRevB.66.134416
- (2002) Phys. Rev. B , vol.66 , pp. 134416
- Bibes, M.¹ Valencia, S.² Balcells, L.³ Martínez, B.⁴ Fontcuberta, J.⁵ Wojcik, M.⁶ Nadolski, S.⁷ Jedryka, E.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.