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Volumn 267, Issue 8-9, 2009, Pages 1476-1479
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Ion implantation studies on VOx films prepared by pulsed dc reactive sputtering
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Author keywords
Ion implantation; Pulsed dc sputtering; Vanadium oxide
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Indexed keywords
CURRENT-VOLTAGE MEASUREMENTS;
DEFECT CONTROLS;
DEFECT STATE;
ELECTROACTIVE;
ELECTRONIC MATERIALS;
FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES;
HIGH RESISTIVITIES;
INERT ATMOSPHERES;
LOW RESISTIVITIES;
MICRO-BOLOMETERS;
ORDER OF MAGNITUDES;
OXYGEN FLOW RATES;
PULSED DC SPUTTERING;
PULSED-DC;
READ-OUT INTEGRATED CIRCUITS;
RESISTIVITY CHANGES;
ROOM TEMPERATURES;
STRUCTURAL AND ELECTRICAL PROPERTIES;
TEMPERATURE COEFFICIENT OF RESISTANCES;
TEMPERATURE RANGES;
TEMPERATURE-SENSITIVE MATERIALS;
THERMAL-ANNEALING;
VANADIUM OXIDE;
VANADIUM TARGETS;
X-RAY DIFFRACTIONS;
ANNEALING;
BOLOMETERS;
ELECTRIC PROPERTIES;
ELECTRIC REACTORS;
ELECTRODEPOSITION;
ELECTRONIC PROPERTIES;
FIELD EMISSION;
HELIUM;
HYDROGEN;
INTEGRATED CIRCUITS;
ION BOMBARDMENT;
ION IMPLANTATION;
OXIDES;
OXYGEN;
SCANNING ELECTRON MICROSCOPY;
THERMAL CONDUCTIVITY OF SOLIDS;
THIN FILMS;
TRANSITION METALS;
VANADIUM;
VANADIUM ALLOYS;
VANADIUM COMPOUNDS;
ATMOSPHERIC TEMPERATURE;
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EID: 65249175782
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2009.01.152 Document Type: Article |
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Times cited : (13)
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References (4)
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