The influence of defects and impurities on electrical properties of high high - k diele dielectrics trics

Materials Science Forum

Volumn 608, Issue , 2009, Pages 55-109

  Dabrowski J ^a   Miyazaki, S ^b   Inumiya, S ^c   Kozlowski G ^a   Lippert, G ^a   Lu Pina G ^a   Nara, Y ^b   Mussig H J ^a   Ohta, A ^b   Pei, Y ^c  

^a IHP   (Germany)

^b HIROSHIMA UNIVERSITY   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; HAFNIUM COMPOUNDS; HIGH-K DIELECTRIC; IMPURITIES; PRASEODYMIUM COMPOUNDS; SILICATES; ULTRATHIN FILMS;

ATOMIC-SIZE DEFECTS; DEFECTS AND IMPURITIES; ELECTRICAL BREAKDOWN; ELECTRICAL PARAMETER; HAZARDOUS DEFECTS; LONG LIFETIME; NITROGEN INCORPORATION; ORDERS OF MAGNITUDE;

DIELECTRIC MATERIALS;

EID: 65249150177     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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