Inverse spinel ZnFe2 O4 nanoparticles synthesized by ion implantation and post-annealing: An investigation using X-ray spectroscopy and magneto-transport

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1620-1622

  Zhou, Shengqiang ^a   Potzger, K ^a   Burger D ^a   Kuepper, K ^a,b   Helm, M ^a   Fassbender, J ^a   Schmidt, H ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Magnetoresistance; X ray absorption; ZnFe2O4

Indexed keywords

BULK MATERIALS; CATION DISTRIBUTIONS; HYSTERETIC BEHAVIORS; INVERSE SPINELS; MAGNETIZATION - REVERSALS; MAGNETO TRANSPORTS; POSITIVE MAGNETORESISTANCES; POST-ANNEALING; TETRAHEDRAL SITES; X-RAY SPECTROSCOPIES; ZNFE2O4; ZNO MATRIXES;

ABSORPTION; ELECTRIC RESISTANCE; HYSTERESIS; ION BOMBARDMENT; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETOS; NANOCRYSTALS; NANOPARTICLES; SEMICONDUCTING ZINC COMPOUNDS; X RAY ABSORPTION; X RAY SPECTROSCOPY; ZINC OXIDE;

MAGNETIZATION REVERSAL;

EID: 65249107293     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.067     Document Type: Article

References (17)

1. Chikazumi S. Physics of Ferromagnetism (1997), Oxford University Press, Oxford
2. Singh D.J., Gupta M., and Gupta R. Phys. Rev. B 63 (2001) 205102
3. Shinagawa T., Izaki M., Inui H., Murase K., and Awakura Y. Chem. Mater. 18 (2006) 763
4. Chinnasamy C.N., Narayanasamy A., Ponpandian N., Chattopadhyay K., Guerault H., and Greneche J.M. J. Phys. Condens. Matter 12 (2000) 7795
5. Hamdeh H.H., Ho J.C., Oliver S.A., Willey R.J., Oliveri G., and Busca G. J. Appl. Phys. 81 (1997) 1851
6. Ammar S., Jouini N., Fievet F., Beji Z., Smiri L., Moline P., Danot M., and Greneche J.M. J. Phys. Condens. Matter 18 (2006) 9055
7. Zhou Z.H., Wang J., Xue J.M., and Chan H.S.O. Appl. Phys. Lett. 79 (2001) 3167
8. Oliver S.A., Hamdeh H.H., and Ho J.C. Phys. Rev. B 60 (1999) 3400
9. Bohra M., Prasad S., Kumar N., Misra D.S., Sahoo S.C., Venkataramani N., and Krishnan R. Appl. Phys. Lett. 88 (2006) 262506
10. Zhou S., Potzger K., Reuther H., Talut G., Eichhorn F., von Borany J., Skorupa W., Helm M., and Fassbender J. J. Phys. D - Appl. Phys. 40 (2007) 964
11. Pong W.F., Chang Y.K., Su M.H., Tseng P.K., Lin H.J., Ho G.H., Tsang K.L., and Chen C.T. Phys. Rev. B 55 (1997) 11409
12. Takaobushi J., Ishikawa M., Ueda S., Ikenaga E., Kim J.-J., Kobata M., Takeda Y., Saitoh Y., Yabashi M., Nishino Y., Miwa D., Tamasaku K., Ishikawa T., Satoh I., Tanaka H., Kobayashi K., and Kawai T. Phys. Rev. B 76 (2007) 205108
13. Heluani S., Braunstein G., Villafuerte M., Simonelli G., and Duhalde S. Thin Solid Films 515 (2006) 2379
14. Xu Q., Hartmann L., Schmidt H., Hochmuth H., Lorenz M., Schmidt-Grund R., Sturm C., Spemann D., and Grundmann M. Phys. Rev. B 73 (2006) 205342
15. Das S., and Chaudhuri S. Phys. Status Solidi (b) 244 (2007) 2657
16. Ponpandian N., and Narayanasamy A. J. Appl. Phys. 92 (2002) 2770
17. Xu Q., Hartmann L., Schmidt H., Hochmuth H., Lorenz M., Spemann D., and Grundmann M. Phys. Rev. B 76 (2007) 134417