Thickness measurement of silicon thin film coated on metal mold by analyzing infrared thermal image

International Communications in Heat and Mass Transfer

Volumn 36, Issue 5, 2009, Pages 462-466

  Park, Il Seouk ^a   Ha, Ji Soo ^b  

^a POSCO   (South Korea)

^b Keimyung University   (South Korea)

Author keywords

Artificial breast implant pack; Infrared thermal radiation; Non contact thickness measurement

Indexed keywords

ARTIFICIAL BREAST IMPLANT PACK; INFRA-RED CAMERAS; INFRARED LIGHTS; INFRARED THERMAL IMAGES; INFRARED THERMAL RADIATION; MEASURING TECHNIQUES; METAL MOLDS; NON-CONTACT THICKNESS MEASUREMENT; SILICON FILMS; SILICON THIN FILMS; THERMAL IMAGES;

HEAT RADIATION; MOLDS; THICKNESS GAGES; THICKNESS MEASUREMENT; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64749084616     PISSN: 07351933     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.icheatmasstransfer.2009.02.008     Document Type: Article

References (12)

1. Maissel L.I., and Glang R. Handbook of Thin Film Technology (1970), McGraw-Hill, New York 11-29
2. McCrackin F.L., Passaglia E., Stromberg R.R., and Steinberg H.L. Measurement of the thickness and refractive index of very thin films and the optical properties of surfaces by ellipsometry. Journal of Research of the National Bureau of Standards-A. Physics and Chemistry 67A 4 (1963) 363-377
3. Kim Y.T., Allara D.L., and Collins R.W. Real-time spectroscopic ellipsometry study of the electrochemical deposition of poly pyrrole thin film. Thin Solid Films 193 (1990) 350-360
4. Cong Y., An I., and Nguyen H.V. Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry. Surf. Coat. Technol. 49 1 (1991) 381-386
5. Nakano H., Sakamoto T., and Taniguchi K. Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry. J. Appl. Physi. 83 3 (1998) 1384-1389
6. Moller H., Bobel F.G., and Ritter G. In-situ observation of chemical vapour deposition growth of epitaxial SiGe thin films by reflexion supported pyrometric interferometry. J. Cryst. Growth 146 1 (1995) 119-124
7. Krasicky P.D., Groele R.J., and Rodriguez F. Measuring and modeling the transition layer during the dissolution of glassy polymer films. J. Appl. Polym. Sci. 35 3 (1988) 641-651
8. Saenger K.L., and Tong H.M. Laser interferometric measurement of polymer thin film thickness changes during processing. J. Appl. Polym. Sci. 33 5 (1987) 1777-1784
9. Sarfaty M., Baum C., and Breun R. Real-time measurement of thin film thickness during plasma processing. Plasmas Polym. 2 4 (1997) 229-244
10. Yu F., Zhou Z.-H., Stout P., and Reif R. In-situ monitoring of epitaxial film thickness by IEMI. IEEE Transactions on Semiconductor Manufacturing 5 1 (1992) 34-40
11. Zhou Z.-H., Yang I., Yu F., and Reif R. Fundamentals of epitaxial silicon film thickness measurements using emission and reflection Fourier transform infrared spectroscopy. J. Appl. Physi. 73 11 (1993) 7331-7337
12. Zhou Z.-H., and Reif R. Epi-film thickness measurements using emission Fourier transform infrared spectroscopy-part I: sensor characterization. IEEE Transactions on Semiconductor Manufacturing 8 3 (1995) 333-339