RF performance boosting for 40nm-node CMOS device by Low-k/Cu dual damascene contact

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Kawahara, J ^a   Hijioka, K ^a   Kume I , ^a   Nagase, A ^a   Tanabe, A ^a   Ueki, M ^a   Yamamoto, H ^a   Ito, F ^a   Inoue, N ^a   Tagami, M ^a   Furutake, N ^a   Onodera, T ^a   Saito, S ^a   Takeuchi, T ^a   Fukai, T ^c   Asada, M ^c   Arita, K ^b   Motoyama, K ^b   Nakajima, A ^b   Nakazawa, E ^b   Kitao, R ^b   Fujii, K ^b   Sekine, M ^b   Ikeda, M ^c   Hayashi, Y ^a   more..

^a LSI Fundamental Research Laboratory   (Japan)

^b Process Development Division   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON COMPOSITES; CMOS DEVICES; CONTACT STRUCTURES; CUT-OFF FREQUENCY (FT); DUAL DAMASCENES; LOW- K FILMS; MAXIMUM OSCILLATION FREQUENCIES; PARASITIC CAPACITANCES; PLUG STRUCTURES; RF PERFORMANCE;

CARBON FILMS; COMPOSITE FILMS; COPPER; ELECTRON DEVICES; SILICA;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 64549153508     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796765     Document Type: Conference Paper

References (3)

1. J. Kawahara, et al., Symp. VLSI Technol. Dig., p106. (2008).
2. M.Ueki, et al., IEEE IEDM pp.973-976(2007).
3. Y. Hayashi et al., IEEE Trans. SMT, Vol. 21, No. 3, p 469, (2008).