Esd qualification changes for 45NM and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Duvvury, Charvaka ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PERCEPTIONS; FEATURE SIZES; HIGH-SPEED OPERATIONS; PARADIGM SHIFTS; SILICON TECHNOLOGIES; SUB-50 NM;

ELECTRON DEVICES; ELECTROSTATIC DEVICES;

ELECTROSTATIC DISCHARGE;

EID: 64549141516     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796688     Document Type: Conference Paper

References (6)

1. C. Duvvury, "Paradigm Shift in ESD Qualification," IRPS Proceedings, 2008.
2. G. Boselli et al., "Analysis of ESD protection components in 65nm CMOS technology: scaling perspective and impact on ESD design window," EOS/ESD Symp. 2005.
3. nd Edition, 2002.
4. ANSI/ESD S20.20; ESD Association Standard for the Development of an Electrostatic Discharge Control Program for- Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excludes Initiated Explosive Devices).
5. White Paper 1: "A Case for Lowering Component Level HBM/MM ESD Specifications and Requirements," August 2008, www.esdtargets.blo gspot.com
6. IEC-61000-4-2 edition 1.2, 2001 "EMC-Part 4.2: Testing and Measurement Techniques - ESD Immunity Test." A, Jahanzeb et al., 2007 ESD Symp. Proc.