Implementation and optimization of asymmetric transistors in advanced SOI CMOS technologies for high performance microprocessors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Hoentschel, J ^a   Wei, A ^a   Wiatr, M ^a   Gehring, A ^a   Scheiper, T ^a   Mulfinger, R ^a   Feudel, T ^a   Lingner, T ^a   Poock, A ^a   Muehle, S ^a   Krueger, C ^a   Herrmann, T ^b   Klix, W ^b   Stenzel, R ^b   Stephan, R ^a   Huebler, P ^a   Kammler, T ^a   Shi, P ^a   Raab, M ^a   Greenlaw, D ^a   Horstmann, M ^a   more..

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITY OF APPLIED SCIENCES DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; HIGH-PERFORMANCE MICROPROCESSORS; IMPLEMENTATION AND OPTIMIZATIONS; IMPROVED RELIABILITIES; LEADING EDGES; SOI CMOS; SOURCE/DRAIN EXTENSIONS;

ELECTRON DEVICES;

EID: 64549119010     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796775     Document Type: Conference Paper

References (6)

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4. S. K. H. Fung, et al., Int. Electron Dev. Meeting, p.1035, 2007
5. M. Horstmann, et al., Int. Electron Dev. Meeting, p.243, 2005
6. A. Wei et al., Symposium on VLSI Technology, p.216, 2007