Mesa sample preparation for secondary ion mass spectrometry depth profiling using an automated dicing saw

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 677-680

  Guenther, T ^a   Jiang, Z X ^a   Kim, K ^a   Sieloff, D D ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILES; DETECTION LIMITS; DEVICE PERFORMANCE; DICING SAWS; DOPANT CONCENTRATIONS; DOPANT PROFILES; EDGE EFFECTS; HIGH DOSE; MATRIXES; MESA STRUCTURES; PEAK SHAPES; REMEDIAL METHODS; SAMPLE PREPARATIONS; SCANNING ELECTRON MICROSCOPY IMAGES; SECONDARY ION-MASS SPECTROMETRIES; SECONDARY IONS; SEMI-CONDUCTOR FABRICATIONS; SIMS PROFILES; SIMULATION MODELING;

DEPTH PROFILING; EDGE DETECTION; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; IONS; MASS SPECTROMETERS; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SPECTROMETRY; SPECTRUM ANALYSIS; STANDARDS; TRACE ANALYSIS;

SECONDARY ION MASS SPECTROMETRY;

EID: 64549116849     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3079652     Document Type: Article

References (6)

1. R. Wilson, F. Stevie, and C. Magee, Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (Wiley, New York, 1989), pp. 1.4-2.
2. G. Gillen, Surf. Interface Anal. 18, 777 (1992).
3. R. von Criegern, I. Weitzel, and Jj. Fottner, Secondary Ion Mass Spectrometry: SIMS IV, Springer Series in Chemical Physics Vol. 36 (Springer Verlag, Osaka, Japan, 1984), p. 308.
4. R. von Criegern, I. Weitzel, H. Zeininger, and R. Lange-Gieseler, Surf. Interface Anal. 15, 415 (1990).
5. J. M. McKinley, B. B. Rossie, M. A. Decker, and F. A. Stevie, Microscopy and Microanalysis Proceedings, 2002 (unpublished), paper No. 542CD.
6. Cameca Quadrupole SIMS Service Newsletter, June 2007, p. 5.