Exploring the limits and practicality of Q-based temperature compensation for silicon resonators

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Salvia, J ^a   Messana, M ^a   Ohline, M ^a   Hopcroft, M A ^b   Melamud, R ^a   Chandorkar, S ^a   Lee, H K ^a   Bahl, G ^a   Murmann, B ^a   Kenny, T W ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATION SCHEMES; FREQUENCY REFERENCES; MICROMECHANICAL SILICON RESONATORS; MULTIPOINT; PROTOTYPE OSCILLATORS; QUALITY FACTORS; SILICON RESONATORS; SINGLE POINTS; TEMPERATURE COMPENSATIONS; TEMPERATURE STABILITIES;

CALIBRATION; ELECTRON DEVICES; EMBEDDED SYSTEMS; PRINTED CIRCUIT MANUFACTURE; RESONATORS; TEMPERATURE DISTRIBUTION;

PRINTED CIRCUIT BOARDS;

EID: 64549110186     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796783     Document Type: Conference Paper

References (9)

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