Non-Ohmic conduction in polydiacetylene thin films

Current Applied Physics

Volumn 5, Issue 1, 2005, Pages 85-89

  Aleshin, A N ^a,b   Chu, S W ^a   Kozub, V I ^b   Lee, S W ^a   Lee, J Y ^a   Lee, S H ^a   Kim, D W ^a   Park, Y W ^a  

^a Seoul National University   (South Korea)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Field effect transistor (FET); Polydiacetylene (PDA) thin film; Temperature dependent I V characteristics; Tunneling conduction at low temperature

Indexed keywords

EID: 6444221442     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2003.11.087     Document Type: Article

References (17)

1. Wegner G. in: Hadfield W.E. ed. Molecular Metals 1979 Plenum Press New York
2. Donovan K.J. Wilson E.G. Philos. Mag. 44 1981 9
3. Blum T. Bassler H. J. Chem. Phys. 123 1988 431
4. Moses D. Heeger A.J. J. Phys. Condens. Matter 1 1989 7395
5. Fisher N.E. Willock D.J. J. Phys. Condens. Matter 4 1992 2517 2543
6. Karl N. in: Madelung O. Schulz M. Weiss H. eds. Organic Semiconductors, Landolt-Bornstein, New Series, Semiconductors vol. 17 1985 106 Springer Berlin (SubVol. 17i)
7. Semaltianos N.G. Chem. Phys. Lett. 329 2000 79
8. Sze S.M. Semiconductor Devices Physics and Technology 1985 Wiley New York
9. Horowitz J. Adv. Mater. 10 1998 365
10. Katz H.E. J. Mater. Chem. 7 1997 369
11. Tans S.J. Verschueren A.R.M. Dekker C. Nature 393 1998 49
12. Park J.G. Kim G.T. Park J.H. Yu H.Y. et al. Thin Solid Films 393 2001 161
13. Simmons J.G. Phys. Rev. 155 1967 657
14. Shklovskii B.I. Fiz. Tekh. Poluprovodn. (Leningrad) 6 1972 2335 (Sov. Phys. Semicond. 6 (1973) 1964)
15. Shklovskii B.I. Fiz. Tekh. Poluprovodn. (Leningrad) 13 1979 93 (Sov. Phys. Semicond. 13 (1979) 53)
16. Paschen S. Bussac M.N. Zuppiroli L. Minder E. Hilti B. J. Appl. Phys. 78 1995 3230
17. Sebastian L. Weiser G. Phys. Rev. Lett. 46 1981 1156