Evaluating the performance of a MOSFET dosimeter at diagnostic X-ray energies for interventional radiology

Radiological Physics and Technology

Volumn 2, Issue 1, 2009, Pages 58-61

  Chida, Koichi ^a   Inaba, Youhei ^b   Masuyama, Hanako ^a   Yanagawa, Isao ^b   Mori, Issei ^a   Saito, Haruo ^a   Maruoka, Shin ^a   Zuguchi, Masayuki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY HOSPITAL   (Japan)

Author keywords

Exposure dose; Interventional radiology; Metal oxide semiconductor field effect transistor (MOSFET); Radiation dosimetry; Radiation injury

Indexed keywords

METAL OXIDE;

ARTICLE; BIOSENSOR; DOSIMETRY; EVALUATION; FEASIBILITY STUDY; FIELD EFFECT TRANSISTOR; INTERVENTIONAL RADIOLOGY; MEASUREMENT; PRIORITY JOURNAL; RADIATION DOSE; SEMICONDUCTOR; SENSITIVITY ANALYSIS; SKIN INJURY; X RAY ANALYSIS;

FEASIBILITY STUDIES; METALS; OXIDES; RADIATION DOSAGE; RADIOGRAPHY, INTERVENTIONAL; RADIOMETRY; SKIN; TOMOGRAPHY, X-RAY COMPUTED; TRANSISTORS, ELECTRONIC;

EID: 64249094157     PISSN: 18650333     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12194-008-0044-z     Document Type: Article

References (12)

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