Current-voltage and capacitance-voltage characteristics of the ITO/polyaniline doped boron trifloride/A1 Schottky diode

Polymers for Advanced Technologies

Volumn 19, Issue 12, 2008, Pages 1882-1886

  Yakuphanoglu, Fahrettin ^a   Şenkai, B Filiz ^b  

^a FIRAT UNIVERSITY   (Turkey)

^b ISTANBUL TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Organic semiconductor; Polyaniline doped boron trifloride; Schottky diode

Indexed keywords

BARRIER HEIGHTS; C-V MEASUREMENTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPACITANCE-VOLTAGE METHODS; CURRENT FLOWS; CURRENT VOLTAGES; ELECTRICAL CHARACTERISTICS; FORWARD-BIAS VOLTAGES; I-V AND C-V CHARACTERISTICS; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACE STATE; ORGANIC SEMICONDUCTOR; RECTIFICATION BEHAVIORS; REVERSE BIAS VOLTAGES; SCHOTTKY DIODE; SCHOTTKY EMISSION MECHANISMS; SPACE CHARGES; TRANSPORT MECHANISMS;

ALUMINUM; BIAS VOLTAGE; BORON; CAPACITANCE; DIODES; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; POLYANILINE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

BORON; ELECTRONICS; POLYANILINE;

EID: 64149130887     PISSN: 10427147     EISSN: 10991581     Source Type: Journal    
DOI: 10.1002/pat.1223     Document Type: Article

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