Magnetoelectric Cr2O3 for spintronic applications

Integrated Ferroelectrics

Volumn 99, Issue 1, 2008, Pages 69-76

  Borisov, P ^a   Hochstrat, A ^a   Shvartsman, V V ^a   Kleemann, W ^a   Hauck, P M ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

Exchange Bias; Magnetoelectricity; Multiferroics; Spintronics

Indexed keywords

ANTIFERROMAGNETICS; BEFORE AND AFTER; CRYSTALLINE SUBSTRATES; DOWN-SCALING; EXCHANGE BIAS; FERROMAGNETS; HETEROLAYERS; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETOELECTRICITY; MOLECULAR-BEAM EPITAXY; MULTIFERROICS; NANO GRAINS; SPINTRONIC APPLICATIONS; SPINTRONICS; THERMAL-ANNEALING;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CHROMIUM; CRYSTAL GROWTH; MAGNETIC STORAGE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOTECHNOLOGY; RANDOM ACCESS STORAGE; SINGLE CRYSTALS;

COMPOSITE MICROMECHANICS;

EID: 64149109574     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802107700     Document Type: Conference Paper

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