The structural, electronic and optical properties of the chalcopyrite semiconductor ZnSiAs2

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1326-1331

  Xu, Bin ^a   Han, Hongpei ^b   Sun, Jinfeng ^c   Yi, Lin ^d  

^a NORTH CHINA INSTITUTE OF WATER CONSERVANCY AND HYDROELECTRIC POWER   (China)

^b XUCHANG UNIVERSITY   (China)

^c HENAN NORMAL UNIVERSITY   (China)

^d HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electronic band structure; Optical properties; Semiconductor

Indexed keywords

BAND GAPS; CHALCOPYRITE SEMICONDUCTORS; DIELECTRIC FUNCTIONS; DIRECT BAND GAPS; ELECTRONIC BAND STRUCTURE; ENERGY-LOSS SPECTRUM; FP-LAPW + LO; FULL-POTENTIAL LINEARIZED AUGMENTED PLANE WAVES; IMAGINARY PARTS; LOCAL ORBITALS; REFLECTIVITY SPECTRUM; SEMICONDUCTOR; SI ATOMS;

COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; ENERGY GAP; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS;

STRUCTURAL PROPERTIES;

EID: 64149105522     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.12.016     Document Type: Article

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