Emission spectrum analysis of laser ablation on the silicon surface

Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis

Volumn 29, Issue 4, 2009, Pages 869-873

  Han, Jing Hua ^a,b   Feng, Guo Ying ^a   Yang, Li Ming ^b   Yang, Li Ling ^a   Zhang, Qiu Hui ^a   Xie, Xu Dong ^c   Zhu, Qi Hua ^c  

^a SICHUAN UNIVERSITY   (China)

^b CHENGDU FINE OPTICAL ENGINEERING RESEARCH CENTER   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Electron density; Electron temperature; Laser induced plasma; Monocrystalline silicon; Spectrum analysis

Indexed keywords

COLOR CHANGES; ELECTRON DENSITY; EMISSION SPECTRUMS; FREE ELECTRONS; FREE-ELECTRON DENSITIES; LASER PLASMAS; LASER-INDUCED PLASMA; MONOCRYSTALLINE SILICON; PLASMA TEMPERATURES; SILICON SURFACES;

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; EMISSION SPECTROSCOPY; INTERFEROMETRY; LASER ABLATION; LASER BEAMS; LASER PRODUCED PLASMAS; LASERS; NONMETALS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; THERMAL PLUMES;

ELECTRON TEMPERATURE;

EID: 64049083948     PISSN: 10000593     EISSN: None     Source Type: Journal    
DOI: 10.3964/j.issn.1000-0593(2009)04-0869-05     Document Type: Article

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