Characterization of electrical properties in SiC crystals by Raman scattering spectroscopy

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 501-504

  Kitamura, T ^a   Nakashima, S ^a   Kato, T ^a   Kojima, K ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC; 6H SiC; Electrical property; Raman scattering

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

4H-SIC; 6H-SIC; FREE CARRIER DENSITY; LINE SHAPE ANALYSIS; LO-PHONON-PLASMON; PEAK FREQUENCIES; RAMAN MEASUREMENTS; RAMAN SCATTERING SPECTROSCOPY;

SILICON CARBIDE;

EID: 63849225731     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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