Strain-induced effects on antiferromagnetic ordering and magnetocapacitance in orthorhombic HoMnO3 thin films

Journal of Physics Condensed Matter

Volumn 21, Issue 2, 2009, Pages

  Lin, T H ^a   Shih, H C ^a   Hsieh, C C ^a   Luo, C W ^a   Lin, J Y ^a   Her, J L ^b   Yang, H D ^b   Hsu, C H ^c   Wu, K H ^a   Uen, T M ^a   Juang, J Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGES; ANTI-FERROMAGNETIC ORDERINGS; APPLIED FIELDS; DIELECTRIC CONSTANTS; FERROELECTRIC PROPERTIES; LOW TEMPERATURES; MAGNETIC ORDERINGS; MAGNETIC TRANSITIONS; MAGNETOCAPACITANCE; NB-DOPED SRTIO; ORTHORHOMBIC PHASE; PBNM SYMMETRIES; STRAIN-INDUCED EFFECTS; X- RAY DIFFRACTIONS;

ANTIFERROMAGNETISM; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; FERROMAGNETISM; HOLMIUM; NIOBIUM; PERMITTIVITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANTIFERROMAGNETIC MATERIALS;

EID: 63749119953     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/2/026013     Document Type: Article

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