Impact of lanthanum on PZT resistance degradation

Ferroelectrics

Volumn 362, Issue 1, 2008, Pages 123-127

  Chentir, M T ^a,b   Bouyssou, E ^b   Ventura, L ^a   Guegan, G ^b   Anceau, C ^b  

^a UNIVERSITÉ DE TOURS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM DOPING; PLZT FILMS; PZT; RESISTANCE DEGRADATION; SCHOTTKY BARRIER LOWERING;

CAPACITANCE; CAPACITORS; DOPING (ADDITIVES); FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; IMPACT RESISTANCE; LANTHANUM; LANTHANUM ALLOYS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 63749083776     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802006806     Document Type: Conference Paper

References (7)

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