Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

Journal of Physics Condensed Matter

Volumn 21, Issue 5, 2009, Pages

  Mogilevtsev, D ^a   Nisovtsev, A P ^a   Kilin, S ^a   Cavalcanti, S B ^b,c   Brandi, H S ^c,d   Oliveira, L E ^c,e  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b FEDERAL UNIVERSITY OF ALAGOAS   (Brazil)

^c INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

^d FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^e UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; MOTION ESTIMATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

DE-PHASING; DEPHASING RATES; DRIVING INTENSITIES; EXPERIMENTAL MEASUREMENTS; EXTERNAL ELECTROMAGNETIC FIELDS; INTENSITY DEPENDENTS; NON-MARKOVIAN; NON-STATIONARY EFFECTS; RABI OSCILLATIONS; SEMICONDUCTOR SYSTEMS; SYSTEMATIC INVESTIGATIONS; TWO-LEVEL SYSTEMS;

DAMPING;

EID: 63649162411     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/5/055801     Document Type: Article

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