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Materials Science and Engineering: B

Volumn 113, Issue 3, 2004, Pages 179-183

Space growth studies of Ce-doped Bi12SiO20 single crystal

(8) Zhou, Y F a Wang, J C a Tang, L A a Pan, Z L a Chen, N F b Chen, W C c Huang, Y Y d He, W d

a SHANGHAI INSTITUTE OF CERAMICS (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c INSTITUTE OF PHYSICS (China)

d INSTITUTE OF HIGH ENERGY PHYSICS (China)

Author keywords

Bismuth compounds; Bridgman technique; Crystal growth; Doping effects; Microgravity condition

Indexed keywords

ABSORPTION SPECTROSCOPY; CERIUM; CRYSTAL GROWTH; DOPING (ADDITIVES); MICROGRAVITY PROCESSING; RAMAN SCATTERING; SINGLE CRYSTALS; SPACECRAFT;

BRIDGMAN TECHNIQUE; DOPING EFFECTS; MICROGRAVITY CONDITIONS; X-RAY ROCKING CURVE;

BISMUTH COMPOUNDS;

EID: 6344294878 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(04)00404-0 Document Type: Article

Times cited : (11)

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