Predicting the SOI history effect using compact models

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 183-186

  Na, M H ^a   Watts, J S ^a   Nowak, E J ^a   Williams, R Q ^a   Clark, W F ^a  

^a IBM   (United States)

Author keywords

Compact model; Dynamic body effect; History; Partially depleted; Silicon on insulator

Indexed keywords

COMPUTER HARDWARE; DIELECTRIC DEVICES; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; HISTORY; PARAMETER ESTIMATION; SWITCHING; TRANSISTORS;

COMPACT MODEL; DYNAMIC BODY EFFECT; MODEL EXTRACTION; PARTIALLY-DEPLETED;

SILICON ON INSULATOR TECHNOLOGY;

EID: 6344291598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. J.P. Colinge, SOI Technology, Kluwer Press, 1991.
2. R. Shiebel, et al., Proc. IEEE Int. SOI Conf., p. 154, 1997.
3. J. Jacobs, et al., Proc. IEEE Int. SOI Conf., p. 111, 1998.
4. J. Gautier, et al., IEDM Tech. Dig., pp.407, 1997.
5. S.K.H. Fung, et al, IEEE Int. SOI Conf. Proc., p.122-123, 2000.
6. P. Su, et al., ISQED, pp. 487-491, 2002.
7. D. Suh, et al., IEDM Tech. Dig., pp.661-664, 1994.
8. BSIMPD2.2 User's manual, University of California, Berkeley, 1999.