A basic property of MOS transistors and its circuit implications

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 246-249

  Vittoz, E ^a   Enz, C ^a   Krummenacher, F ^b  

^a CSEM   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

Current mode; MOS transistor; Superposition; Symmetry

Indexed keywords

CURRENT MODES; SUPERPOSITION; SYMMETRY;

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERMI LEVEL; MATHEMATICAL MODELS; MIRRORS; RESISTORS;

MOSFET DEVICES;

EID: 6344285549     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. C. Enz, F. Krummenacher and E. Vittoz, Analog Integrated Circuits and Signal Processing, 8, 83-114, 1995.
2. Y. Tsividis, Operation and Modeling of The MOS Transistor, p.152, McGraw-Hill,1999.
3. E. Vittoz and X. Arreguit, El.Letters, 29, 297-299, 1993.
4. E. Vittoz, Proc.MicroNeuro'97, Dresden,163-173, 1997.
5. K. Bult and G. Geelen, ISSCC Digest Tech. Papers, 198-199, 1992.
6. C. Enz and E. Vittoz, Emerging Technologies: Designing Low-Power Digital Circuits, IEEE Piscataway, 79-133, 1996.
7. E. Vittoz, Design of VLSI Circuits for Telecom, and Signal Processing, Chapter 5, Prentice-Hall, 1994.
8. B. Minch, Proc. ISCAS'02, 3, 619-622, 2002.