A role of a-Si:H buffer layer for controlling the impurity profiles near P/I interface of microcrystalline silicon solar cell

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1816-1819

  Taira, Shigeharu ^a   Shima, Masaki ^a   Murata, Kenji ^a   Tanaka, Makoto ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; BUFFER LAYERS; MICROCRYSTALLINE SILICON; SPECTRAL RESPONSE;

CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; HYDROGEN; INTERFACES (MATERIALS); IRRADIATION; SILICON;

SOLAR CELLS;

EID: 6344282854     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. th IEEE Photovoltaic Energy Conversion, (IEEE Inc, Piscataway, 1996) p.1053.
2. M. Isomura, Y. Hishikawa, T. Kinoshita, S. Okamoto, M. Sasaki, T. Takahama, T. Matsuyama and S. Tsuda, "Correlation between Material Properties and Photovoltaic Performance in Amorphous Silicon Solar Cells", SPIE Int. Symp. (1993) 216
3. T. Kinoshita, M. Isomura, Y. Hishikawa and S. Tsuda, "Influence of Oxygen and Nitrogen in the Intristic Layer of a-Si:H Solar Cells", Jpn. J. Appl. Phys. 35 (1996) 3819
4. st IEEE Photovoltaic Specialists Conference, (IEEE, Florida, 1990) p. 1656.
5. th European Photovoltaic Solar Energy Conference, (Barcelona, 1997) p. 1018