Float-zone silicon for high volume production of solar cells

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn A, Issue , 2003, Pages 943-946

  Vedde, Jan ^a   Clausen, Thomas ^a   Jensen, Leif ^a  

^a Topsil Semiconductor Materials AS   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; FLOAT ZONE; METALLIC IMPURITIES;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEGRADATION; FEEDSTOCKS; OXYGEN; POLYSILICON;

SOLAR CELLS;

EID: 6344282621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J. Zhao, A. Wang, and M. Green, "24,5% Efficiency Silicon PERT Cells on MCZ Substrates and 24.7% Efficiency PERL Cells on FZ substrates", Progress in Photovoltaics, 7, 1999, pp. 471-474.
2. A. Münzer, K. H. Eisenrith, W. W. Krühler, R. E. Schlosser, M. G. Winstel, and F. G. Kragh."Progress of large area 18% - PEBSCO -Silicon solar cells". WCPEC-3, 4P-C4-40.
3. M. J. Cudzinovic, K. R. McIntosh, W. P. Mulligan, David Smith, and R. M. Swanson. "The choice of silicon wafer for the production of low-cost rear-contact solar cells". WCPEC-3 4O-D10-05.
4. A. Luedge, H. Riemann, B. Hallmann, H. Wawra, L. Jensen, T. L. Larsen and A. Nielsen, "HIGH-SPEED GROWTH OF FZ SILICON FOR PHOTOVOLTAICS", Proc. High Purity Silicon VII, The Electrochemical. Soc.