Simulation of orientation-dependent etching of silicon using a new step flow model of 3D structuring

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Volumn , Issue , 2000, Pages 63-66

  Horn, A ^a   Schroder H ^b   Obermeier, E ^b   Wachutka, G ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

3D Simulation; Orientation Dependent Wet Chemical Etching; Silicon

Indexed keywords

COMPOSITE MICROMECHANICS; COMPUTER SIMULATION; CRYSTALLOGRAPHY; DIFFERENTIAL EQUATIONS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; SOLUTIONS;

CONVEX CORNERS; LATERAL ABLATION; ORIENTATION-DEPENDENT WET CHEMICAL ETCHING; THREE DIMENSIONAL (3D) SIMULATION;

ETCHING;

EID: 6344280998     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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