R3, an accurate JFET and 3-terminal diffused resistor model

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 86-89

  McAndrew, Colin C ^a  

^a MOTOROLA INC   (United States)

Author keywords

Compact model; Diffused resistor; JFET; SPICE model; Velocity saturation

Indexed keywords

COMPACT MODEL; DIFFUSED RESISTOR; SPICE MODEL; VELOCITY SATURATION;

COMPUTER SIMULATION; DIFFUSION; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; PINCH EFFECT; RESISTORS; SCHOTTKY BARRIER DIODES; VELOCITY MEASUREMENT;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 6344280786     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. C. C. McAndrew, "Predictive Technology Characterization, Missing Links Between TCAD and Compact Modeling," Proc. IEEE SISPAD, pp. 12-17, 2000.
2. R. V. H. Booth and C. C. McAndrew, "A 3-Terminal Model for Diffused and Ion-Implanted Resistors," IEEE Trans. ED, vol. 44, no. 5, pp. 809-814, May 1997.
3. C. C. McAndrew, S. Sekine, A. Cassagnes, and Z. Wu, "Physically- Based Effective Width Modeling of MOSFETs and Diffused Resistors," Proc. IEEE ICMTS, pp. 169-174, 2000.
4. F. N. Trofimenkoff, "Field-Dependent Mobility Analysis of the Field-Effect Transistor," Proc. IEEE, vol. 53, no. 11, pp. 1765-1766, Nov. 1965.
5. D. M. Caughey and R. E. Thomas, "Carrier Mobilities in Silicon Empirically Related to Doping and Fields," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967.
6. C. C. McAndrew, "Useful Numerical techniques for Compact Modeling," Proc. IEEE ICMTS, pp. 121-126, 2002.
7. K. Banerjee, A. Amerasekera, G. Dixit and C. Hu, "Temperature and Current Effects on Small-Geometry-Contact Resistance," Proc. IEEE IEDM, pp. 115-118, 1997.