Aluminium-induced crystallisation of amorphous silicon: Influence of oxidation conditions

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn A, Issue , 2003, Pages 106-109

  Schneider, J ^a   Klein, J ^a   Muske, M ^a   Schopke A ^a   Gall, S ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION FURNANCES; EUTECTIC TEMPERATURE; SILICON GRAIN SIZE;

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; OPTICAL MICROSCOPY; OXIDATION; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 6344278518     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham, "Aluminium-induced crystallisation of amorphous silicon on glass sustrates above and below the eutectic temperature", Appl. Phys. Lett., 73, 3214 (1998).
2. O. Nast and S. R. Wenham, "Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization", J. Appl. Phys., 88 (1), 124 (2000).
3. S. Gall, J. Schneider, M. Muske, I. Sieber, O. Nast, and W. Fuhs, "Poly-si seeding layers by aluminium-induced crystallisation", in PV in Europe From PV Technology to Energy Solutions, Rome, Italy, pp. 87-90 (7-11 October 2002).