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Volumn A, Issue , 2003, Pages 781-784

GaAs/Si solar cells with internal bragg reflector superlattice structure

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG REFLECTORS; BUFFER LAYERS; SPECTRAL RESPONSES; SUPERLATTICE STRUCTURES;

EID: 6344278434     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (6)
  • 1
    • 0036529202 scopus 로고    scopus 로고
    • Multi-junction solar cells and novel structures for solar cell applications
    • M.Yamaguchi, "Multi-junction solar cells and novel structures for solar cell applications", Physica E, 14, 84(2002).
    • (2002) Physica E , vol.14 , pp. 84
    • Yamaguchi, M.1
  • 2
    • 0000820409 scopus 로고
    • Dislocation generation of GaAs on Si in the cooling stage
    • M. Tachikawa and H. Mori, "Dislocation generation of GaAs on Si in the cooling stage", Appl. Phys. Lett. 56, 2225 (1990).
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 2225
    • Tachikawa, M.1    Mori, H.2
  • 3
    • 0000076696 scopus 로고
    • Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration
    • Y. Okada, H. Shimomura, and M. Kawabe, "Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration", J. Appl. Phys. 73, 7376(1993).
    • (1993) J. Appl. Phys. , vol.73 , pp. 7376
    • Okada, Y.1    Shimomura, H.2    Kawabe, M.3
  • 4
    • 0028387587 scopus 로고
    • Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy
    • Y. Okada, S. Ohta, A. Kawabata, H. Shimomura, and M. Kawabe, "Photoluminescence study of GaAs films on Si(100) Grown by atomic hydrogen-assisted molecular beam epitaxy", J. Electron. Mater., 23, 331(1994).
    • (1994) J. Electron. Mater. , vol.23 , pp. 331
    • Okada, Y.1    Ohta, S.2    Kawabata, A.3    Shimomura, H.4    Kawabe, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.