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Volumn , Issue , 2000, Pages 333-336
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A novel approach to compact I-V modeling for deep-submicron MOSFET's technology development and circuit simulation
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Author keywords
Compact model; De embed; MOSFET; Parameter extraction; Process correlation
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Indexed keywords
CHANNEL LENGTH MODULATION (CLM);
CIRCUIT SIMULATION;
COMPACT MODELS;
PARAMETER EXTRACTION;
PROCESS CORRELATION;
CMOS INTEGRATED CIRCUITS;
CRITICAL CURRENTS;
FUNCTIONS;
ITERATIVE METHODS;
LEAKAGE CURRENTS;
MATHEMATICAL MODELS;
SURFACE ROUGHNESS;
ULSI CIRCUITS;
MOSFET DEVICES;
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EID: 6344262126
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (10)
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