A physically-based model for oxidation in a circular trench in silicon

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Volumn , Issue , 2002, Pages 352-355

  Xu, Y ^a   Sudhama, C ^a   Hong, S ^a   Sellers, J A ^a   Ambadi, S ^a   Kamekona, K ^a   Averett, G ^a   Ruiz, B ^a   Wan, I ^a   Cai, W ^a   Wu, Y ^a   Costa, J C ^a   Davies, R B ^a,b  

^a ON SEMICONDUCTOR   (United States)

^b Advanced Device Design Inc   (United States)

Author keywords

Circular; Concave; Convex; Deal Grove; Dry; Oxidation; Retardation; Stress dependence; Trench; Wet

Indexed keywords

CIRCULAR; CONCAVE; CONVEX; DEAL-GROVE; DRY; RETARDATION; STRESS-DEPENDENCE; TRENCH; WET;

CALIBRATION; COMPUTER SIMULATION; DATA ACQUISITION; DRYING; MATHEMATICAL MODELS; OXIDATION; SCANNING ELECTRON MICROSCOPY; STRESS ANALYSIS; TRENCHING; WETTING;

SILICON;

EID: 6344254916     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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