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Volumn , Issue 1, 2002, Pages 175-178
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Effects of atomic hydrogen on the growth of Ga(In)NAs by RF-molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
FILM GROWTH;
GALLIUM NITRIDE;
HYDROGEN;
INDIUM ALLOYS;
IRRADIATION;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MORPHOLOGY;
NITRIDES;
PHASE SEPARATION;
SEMICONDUCTOR ALLOYS;
SUPERCONDUCTING FILMS;
SURFACE MORPHOLOGY;
ATOMIC HYDROGEN;
CRYSTAL QUALITIES;
GAINNAS;
GROWTH DYNAMICS;
NOVEL STRUCTURES;
OVERALL QUALITY;
THREE-DIMENSIONAL GROWTH;
TWO-DIMENSIONAL GROWTH;
GALLIUM ALLOYS;
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EID: 6344247898
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390016 Document Type: Conference Paper |
Times cited : (5)
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References (13)
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