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Volumn , Issue 1, 2002, Pages 175-178

Effects of atomic hydrogen on the growth of Ga(In)NAs by RF-molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; GALLIUM NITRIDE; HYDROGEN; INDIUM ALLOYS; IRRADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NITRIDES; PHASE SEPARATION; SEMICONDUCTOR ALLOYS; SUPERCONDUCTING FILMS; SURFACE MORPHOLOGY;

EID: 6344247898     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390016     Document Type: Conference Paper
Times cited : (5)

References (13)
  • 6
    • 0012657564 scopus 로고    scopus 로고
    • Ext. Abstr. 46th Spring Meet. 1999, Japan Society of Applied Physics and Related Society
    • T. Kitatani, M. Kondow, K. Nakahara, and K. Uomi, Ext. Abstr. 46th Spring Meet. 1999, Japan Society of Applied Physics and Related Society, Jpn. Soc. Appl. Phys. 51 (1999).
    • (1999) Jpn. Soc. Appl. Phys. , pp. 51
    • Kitatani, T.1    Kondow, M.2    Nakahara, K.3    Uomi, K.4
  • 11
    • 0012740583 scopus 로고    scopus 로고
    • PTD-20, Nagoya (Sept.)
    • Y. Okamoto et al., IWN 2000, PTD-20, Nagoya (Sept. 2000).
    • (2000) IWN 2000
    • Okamoto, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.