Characterisation of industrial-scale remote PECVD SiN depositions

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1128-1130

  Winderbaum, Saul ^a   Leo, Anthony J ^b   Shea, Stephen P ^b   Koval, Timothy D ^b   Kumar, Bikash ^b  

^a Shamash Australia Pty Ltd   (Australia)

^b bp Solar Australia ^*

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PARAMETERS; DEPOSITION TEMPERATURE; LIGHTER EMITTERS; METALLIZATION PROCESS;

CHARACTERIZATION; COOLING; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; REFRACTIVE INDEX; SILICON SOLAR CELLS; THERMAL EFFECTS;

SILICON NITRIDE;

EID: 6344240806     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Roth, Proc. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes (NREL, 2002), p. 163
2. Box, Hunter, Statistics for experimenters
3. W. A. Langford, M. J. Rand, "The hydrogen content of plasma deposited silicon nitride", Journal of Applied Physics, 49, No 4, pp. 2473-2477, April 1978