X-ray absorption near edge structures at the L3,2 and M 3,2 edges: A probe for the electronic behavior of metal nanostructures

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Volumn , Issue , 2002, Pages 458-461

  Yiu, Y M ^a   Sham, T K ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

5d metals; DFT; GGA; L edge XANES; M edge XANES

Indexed keywords

APPROXIMATION THEORY; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERMI LEVEL; GROUND STATE; PROBABILITY DENSITY FUNCTION;

GENERALIZED GRADIENT APPROXIMATION (GGA); LOCAL DENSITY APPROXIMATION (LDA); NANO-DEVICES; X-RAY ABSORPTION NEAR EDGE STRUCTURES (XANES);

NANOSTRUCTURED MATERIALS;

EID: 6344233577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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