Fabrication and green emission of ZnO nanowire arrays

Science in China, Series E: Technological Sciences

Volumn 52, Issue 4, 2009, Pages 883-887

  Zhang, Bin ^a   Zhou, Shaomin ^a   Liu, Bing ^a   Gong, Hechun ^a   Zhang, Xingtang ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

II VI semiconductor; Nanostructures; Photoluminescence

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; EMISSION SPECTROSCOPY; FABRICATION; GROUND STATE; LEAKAGE (FLUID); NANOWIRES; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; ZINC;

EMISSION BANDS; GREEN EMISSIONS; GREEN LIGHT EMISSIONS; GROWTH MECHANISMS; II-VI SEMICONDUCTOR; LOW TEMPERATURES; NANOWIRE ARRAYS; PHOTOLUMINESCENCE SPECTRUM; SI SUBSTRATES; SINGLE-CRYSTALLINE; ULTRA VIOLET EMISSIONS; WELL-ALIGNED; WURZITE; ZNO; ZNO CRYSTALS; ZNO NANOWIRE ARRAYS; ZNO NANOWIRES;

ZINC OXIDE;

EID: 63349106844     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0193-7     Document Type: Article

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