Novel highly volatile MOCVD precursors for Ta2O5 and Nb2O5 thin films

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 243-251

  Yotsuya, T ^a,b   Chiba, H ^b   Furukawa, T ^a,b   Yamamoto, T ^a,b   Inaba, K ^b   Tada, K ^a   Suzuki, T ^b   Fujimoto, K ^b   Funakubo, H ^c   Yamakawa, T ^a   Oshima, N ^a,b  

^a SAGAMI CHEMICAL RESEARCH CENTER   (Japan)

^b TOSOH CORPORATION   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DEPOSITION RATES; DIELECTRIC DEVICES; GATE DIELECTRICS; HIGH-K DIELECTRIC; METALS; NIOBIUM OXIDE; SILICA; TANTALUM OXIDES; THIN FILMS;

LOWER TEMPERATURES; METAL OXIDE FILM; MOCVD PRECURSORS; STEP COVERAGE; VOLATILE LIQUIDS;

OXIDE FILMS;

EID: 63149198412     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981607     Document Type: Conference Paper

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