Photoresponse of GaN:ZnO electrode on FTO under visible light irradiation

Bulletin of the Chemical Society of Japan

Volumn 82, Issue 3, 2009, Pages 401-407

  Hashiguchi, Hiroshi ^a   Maeda, Kazuhiko ^a,c   Abe, Ryu ^b   Ishikawa, Akio ^a   Kubota, Jun ^a   Domen, Kazunari ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AG/AGCL; ANODIC PHOTOCURRENTS; BAND GAPS; CONDUCTIVE GLASS; CURRENT-TIME CURVES; ELECTRON TRANSFERS; IRRADIATION TIME; N-TYPE SEMICONDUCTORS; PHOTO-ELECTROCHEMICAL PROPERTIES; PHOTOELECTROLYSIS; PHOTORESPONSE; POROUS ELECTRODES; SMALL PARTICLE SIZES; VISIBLE LIGHTS; VISIBLE-LIGHT IRRADIATIONS; VOLTAMMOGRAMS; WATER-SPLITTING; ZINC CONCENTRATIONS; ZNO; ZNO ELECTRODES; ZNO SOLID SOLUTIONS;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; IRRADIATION; PHOTOCURRENTS; PHOTODEGRADATION; SEMICONDUCTING ZINC COMPOUNDS; SOLID SOLUTIONS; ZINC; ZINC OXIDE;

SEMICONDUCTING GALLIUM;

EID: 63149189151     PISSN: 00092673     EISSN: 13480634     Source Type: Journal    
DOI: 10.1246/bcsj.82.401     Document Type: Article

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