Muons for spintronics: Photo-induced conduction electron polarization in n-type GaAs observed by the muonium method

Physica B: Condensed Matter

Volumn 404, Issue 5-7, 2009, Pages 856-858

  Yokoyama, K ^a   Nagamine, K ^a,b,c   Shimomura, K ^b   Tom, H W K ^a   Kawakami, R ^a   Bakule, P ^c   Matsuda, Y ^c   Pratt, F L ^d   Torikai, E ^e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^d RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^e UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Conduction electron polarization; GaAs; Laser musr; Spin exchange scattering

Indexed keywords

GALLIUM ALLOYS; LASERS; NANOTECHNOLOGY; POLARIZATION; SCATTERING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SPIN DYNAMICS;

CIRCULARLY POLARIZED; CONDUCTION ELECTRON POLARIZATION; CONDUCTION ELECTRONS; GAAS; LASER LIGHTS; LASER POWER; LOW TEMPERATURES; MUONIUM; PHOTO-INDUCED; SI-DOPING; SIGNAL RESPONSE; SPIN-EXCHANGE SCATTERING; SPINTRONICS; SPINTRONICS MATERIALS;

ELECTRONS;

EID: 63149184653     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.11.153     Document Type: Article

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