Development of integrated electronics on silicon-on-glass (SiOG) substrate

ECS Transactions

Volumn 16, Issue 9, 2009, Pages 371-380

  Manley, R G ^a   Fenger, G L ^a   Meller, P M ^a   Hirschman, K D ^a   Kosik Williams, C A ^b   Dawson Elli, D F ^b   Couillard, J G ^b   Cites, J S ^b  

^a Rochester Institute of Technology   (United States)

^b Science and Technology ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; GLASS BONDING; NANOCRYSTALLINE MATERIALS; SILICON; TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

DEVICE PERFORMANCE; ELECTRICAL SIMULATION; INDUCED SEPARATION; INTEGRATED ELECTRONICS; MATERIAL TECHNOLOGIES; PROCESS SIMPLICITY; SINGLE CRYSTALLINE SILICON; THERMALLY STABLE;

SUBSTRATES;

EID: 63149146213     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2980576     Document Type: Conference Paper

References (5)

1. D.F. Dawson-Elli, C.A. Kosik Williams, J.G. Couillard, J.S. Cites R.G. Manley, G.L. Fenger and K.D. Hirschman, ECS Trans., 8 233 (2007)
2. J. Colinge, IEEE Trans. Elec. Dev. 37 718 (1990)
3. E. Woodard R.G. Manley G. Fenger, R.L. Saxer, K.D. Hirschman, D. Dawson-Elli, J.G. Couillard, IEEE UGIMProc. 16 (2006)
4. W. Kem and D.A. Puotinen, RCA, 31 187 (1970)
5. E. Woodard, Rochester Institute of Technology, M.S. Thesis, (2006)