Recent progress and challenges in enabling embedded Si:C technology

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 317-323

  Yang, B ^a,a   Ren, Z ^b   Takalkar, R ^b   Black, L ^a   Dube, A ^b   Weijtmans, J W ^a   Li, J ^b   Chan, K ^c   De Souza, J ^c   Madan, A ^b   Xia, G ^b   Zhu, Z ^b   Faltermeier, J ^c   Reznicek, A ^c   Adam, T N ^b   Chakravarti, A ^b   Pei, G ^a   Pal, R ^a   Harley, E ^b   Greene, B ^b   Gehring, A ^a   Cai, M ^b   Sadana, D ^c   Park, D G ^c   Mocuta, D ^b   Schepis, D ^b   Maciejewski, E ^b   Luning, S ^a   Leobandung, E ^b   more..

^a ADVANCED MICRO DEVICES   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; SILICON;

CHANNEL MOBILITY; DEVICE FABRICATIONS; DRIVE CURRENT ENHANCEMENT; DRIVE CURRENTS; ELECTRICAL CHARACTERISTIC; PHOSPHORUS-DOPED; RECENT PROGRESS; TEST STRUCTURE;

SI-GE ALLOYS;

EID: 63149143221     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986789     Document Type: Conference Paper

References (5)

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5. A. Madan, J. Li, Z. Ren, F. Yang, E. Harley, T. Adam, R. Loesing, Z. Zhu, T. Pinto, A. Chakravarti, A. Dube, R. Takalkar, J. W. Weijtmans, L. Black, D. Schepis, ECS SiGe and Realted Materials and Devices Symposium, Hawaii, Oct. 2008 (to be published).