Growth and characterization of alternative gate dielectrics by molecular-beam epitaxy

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 213-227

  Edge, L F ^a,b   Tian, W ^a   Vaithyanathan, V ^a   Heeg, T ^a   Schlom, D G ^a   Klenov, D O ^c   Stemmer, S ^c   Wang, J G ^d   Kim, M J ^d  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b IBM   (United States)

^c University of California   (United States)

^d UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALINE EARTH METALS; BUFFER LAYERS; DIELECTRIC DEVICES; GATE DIELECTRICS; HIGH-K DIELECTRIC; LANTHANUM OXIDES; MOLECULAR BEAM EPITAXY; OXIDE FILMS;

ALKALINE EARTH; ALKALINE EARTH OXIDES; ALTERNATIVE GATE DIELECTRICS; CROSS SECTION TEM; CUBE ORIENTATION; EPITAXIAL ORIENTATION RELATIONSHIP; EPITAXIAL RELATIONSHIPS; HIGH RESOLUTION;

THIN FILMS;

EID: 63149128749     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981604     Document Type: Conference Paper

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