Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Steigerwald, A ^a   Xu, Y ^a   Qi, J ^a   Gregory, J ^a   Liu, X ^b   Furdyna, J K ^b   Varga, K ^a   Hmelo, A B ^a   Lupke G ^c   Feldman, L C ^a,d   Tolk, N ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE EMISSION; PHONONS; POINT DEFECTS; SEMICONDUCTOR MATERIALS;

COHERENT ACOUSTIC PHONONS; DEFECT CONCENTRATIONS; DEPTH RANGES; FOUR ORDERS; GAAS CRYSTALS; ION DOSE; LOCAL DEFECTS; OPTICAL RESPONSE; PUMP-PROBE TECHNIQUES; SELF-INTERSTITIAL; SEMICONDUCTOR SYSTEMS; THERMAL-ANNEALING; TIME-RESOLVED;

DEFECTS;

EID: 63049123895     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3099341     Document Type: Article

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