Material analysis of ruthenium-doped titanium dioxide sensing film and applied as calcium ion sensor

Sensor Letters

Volumn 6, Issue 6, 2008, Pages 983-986

  Chou, Jung Chuan ^a   Chen, Cheng Wei ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Calcium ion sensor; Co sputtering system; Extended gate field effect transistor (EGFET); Ruthenium doped titanium dioxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIOSENSORS; CALCIUM; CALCIUM ALLOYS; CALCIUM CHLORIDE; CALCIUM ION SENSORS; FIELD EFFECT TRANSISTORS; FIELD EMISSION; ION SELECTIVE MEMBRANES; LINEARIZATION; NANOSTRUCTURED MATERIALS; OXIDES; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SENSORS; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; SURFACES; TITANIUM; TITANIUM DIOXIDE;

ATOMIC-FORCE MICROSCOPIES; CALCIUM ION SENSOR; CO-SPUTTERING SYSTEM; CRYSTALLINE PHASE; CUBIC STRUCTURES; CURRENT-VOLTAGE MEASUREMENTS; DIRECT CURRENTS; EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET); FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; ION CONCENTRATIONS; ION SENSORS; KEITHLEY; MATERIAL ANALYSIS; MATERIAL CHARACTERISTICS; MEASURED RESULTS; NANO-SCALE; P-TYPE SILICONS; POWER GENERATORS; RADIO FREQUENCIES; SENSING CHARACTERISTICS; SENSING DEVICES; SENSING FILMS; X-RAY DIFFRACTIONS;

IONS;

EID: 63049117552     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2008.545     Document Type: Conference Paper

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