Mechanism of the band gap opening across the order-disorder transition of Si(111)(4×1)-In

Physical Review Letters

Volumn 102, Issue 11, 2009, Pages

  Gonzalez C ^a,b   Guo, Jiandong ^c,d   Ortega, J ^a   Flores, F ^a   Weitering, H H ^c,e  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF TENNESSEE   (United States)

^d INSTITUTE OF PHYSICS   (China)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ENERGY GAP; INDIUM; SCANNING TUNNELING MICROSCOPY;

BAND GAPS; BRILLOUIN ZONES; DENSITY-FUNCTIONAL THEORIES; FERMI SURFACE NESTING; GROUND-STATE PROPERTIES; INDIUM ATOMS; INSULATOR-METAL TRANSITIONS; LOW TEMPERATURES; ORDER-DISORDER TRANSITIONS; SHEAR DISTORTIONS; SI (1 1 1); STM IMAGES; SURFACE-STATE BANDS; TUNNELING SPECTRUM;

METAL INSULATOR TRANSITION;

EID: 63049088988     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.115501     Document Type: Article

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