Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se)2 solar cells by means of electron beam induced current experiments and modelling

Superlattices and Microstructures

Volumn 45, Issue 4-5, 2009, Pages 161-167

  Sieber, B ^a   Ruiz, C M ^b   Bermudez, V ^b  

^a UNIV LILLE   (France)

^b 6 quai Watier   (France)

Author keywords

Chalcopyrite; Diffusion length; Electron beam induced current; Electron microscopy; pn junction; Semiconductor; Solar cells

Indexed keywords

COPPER COMPOUNDS; COST EFFECTIVENESS; DIFFUSION; EFFICIENCY; ELECTRON BEAMS; ELECTRON MICROSCOPY; ELECTRONS; INDUCED CURRENTS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON SOLAR CELLS; THIN FILM SOLAR CELLS;

CHALCOPYRITE; CRYSTALLINE SILICON TECHNOLOGY; DIFFUSION LENGTH; ELECTRON-BEAM-INDUCED CURRENT; HIGH CONVERSION EFFICIENCY; MINORITY CARRIER DIFFUSION LENGTH; P-N JUNCTION; RECOMBINATION PARAMETERS;

SOLAR CELLS;

EID: 62949160304     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.016     Document Type: Article

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