Muonium acceptor states in high GeSi1 - x Gex alloys

Physica B: Condensed Matter

Volumn 404, Issue 5-7, 2009, Pages 812-815

  Carroll, B R ^a   Lichti, R L ^a   King, P J C ^b   Celebi, Y G ^c   Yonenaga, I ^d   Chow, K H ^e  

^a TEXAS TECH UNIVERSITY   (United States)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c ISTANBUL UNIVERSITY   (Turkey)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Hydrogen; Muonium; Silicon germanium alloys

Indexed keywords

BICMOS TECHNOLOGY; CERIUM ALLOYS; GERMANIUM; HYDROGEN; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SPIN DYNAMICS;

ACCEPTOR ENERGIES; ACCEPTOR STATE; CZOCHRALSKI; DIAMAGNETIC SIGNALS; DONOR AND ACCEPTORS; GE CONTENTS; HYPERFINE; MUON-SPIN ROTATIONS; MUONIUM; SI-GE ALLOYS; SILICON GERMANIUM ALLOYS; TIME-DELAYED PROCESS; TRANSVERSE FIELDS;

GERMANIUM ALLOYS;

EID: 62949087867     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.11.165     Document Type: Article

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