90nm TCAM cell design with leakage suppression technique

Electronics Letters

Volumn 45, Issue 6, 2009, Pages 300-302

  Chang, Y J ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS;

CELL DESIGNS; LEAKAGE POWER; LEAKAGE POWER REDUCTIONS; LEAKAGE SUPPRESSIONS; PERFORMANCE PENALTIES; PROCESS TECHNOLOGIES; TERNARY CONTENT-ADDRESSABLE MEMORIES;

LOGIC GATES;

EID: 62549158240     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.3733     Document Type: Article

References (3)

1. Mohan, N., and Sachdev, M.: ' Novel ternary storage cells and techniques for leakage reduction in ternary CAM ', Proc. Int. SOC Conf., 2006, p. 311-314
2. Huang, P.-T., Chang, S.-W., Liu, W.-Y., and Hwang, W.: ' Green Micro-Architecture and Circuit Co-Design for Ternary Content Addressable Memory ', in Proc. Int. Symp. Circuits and Systems, 2008, p. 3322-3325
3. http://bgp.potaroo.net/